Micron creates 20 nm TLC memory chip with 128 gigabit capacity

Micron has been able to create Triple Level Cell (TLC) chips with a capacity of 128 gigabit. The chips are manufactured using a 20 nm production process and, as the name suggests, are capable of storing three bits per memory cell. This combination allows for the same storage capacities to be created using just two-thirds of the chip surface. One of the downsides of the technology is that the writing speeds are rather disappointing and memory cells can be written 'only' 750x. Through over-provisi...



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